作者: B Carrière , B Lang
DOI: 10.1016/0039-6028(77)90267-9
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摘要: Abstract AES is used to determine the initial spectrum of a vacuum-broken SiO 2 surface and follow its dissociation under electron beam probe. Both Auger peaks heights energies are affected by irradiation. The change in stoichiometry accompanied decrease charge 5–8 V. relation between explained influence radiation-induced defects on secondary emission. reduction characterized terms irradiation dose, cross-section impact efficiency. Resistance radiation damage increased carbon contamination. chemical contribution peak energy can be distinguished from charging effect leading shift element compound 12 eV for silicon peak.