The location and doping effect of boron in Si nanocrystals embedded silicon oxide film
作者： Min Xie , Dongsheng Li , Le Chen , Feng Wang , Xiaodong Zhu
DOI: 10.1063/1.4798834
关键词:
摘要: Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with annealing treatment. The evolution size, shape, and density Si-NCs B investigated. observation x-ray photoelectron spectroscopy Si 2p 1s decrease in lattice spacing (111) plane suggest that are doped Si-NCs. confirmed Fano effect micro-Raman spectra for drastic sheet resistance.
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