作者: L M Fraas , J E Avery , H X Huang , R U Martinelli
DOI: 10.1088/0268-1242/18/5/305
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摘要: Thermophotovoltaic (TPV) systems can be characterized by several different parameters including system electrical conversion efficiency, photovoltaic cell electric power density, infrared (IR) emitter temperature and costs. One way of dividing TPV into three categories is via high (T >1400 °C), medium between 1400 °C 1100 °C) low < IR temperature. In the T category, silicon cells used with porous rare earth oxide selective emitters operating at over °C. For emitters, band gaps below 0.6 eV are being studied. These typically made ternary quaternary compounds using MOCVD. They developed for space military applications where these operate temperatures 30 below. potentially have efficiencies 15%. Diffused junction GaSb in mid-temperature range. cost high-volume production. With 1250 °C, densities 1 W cm−2. operated 60 combined heat applications. Systems well 10%. Spectral control another important parameter characterizing configurations. While various means efficiency spectral low- now been demonstrated single-cell experiments, frontier lies integrating arrays, sources complete systems.