How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors
作者： Sungsik Lee , Sanghun Jeon , John Robertson , Arokia Nathan
DOI: 10.1109/IEDM.2012.6479094
关键词:
摘要: We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account sub-gap optical absorption oxygen deficiency defects. analyze basis AOSs, explained terms extended electron lifetime due to retarded recombination as a result hole localization. Also, photoconductive gain AOS photo-TFTs can be maximized by reducing transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation.
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