Mode switching in InN microresonators
作者： D R Kazanov , V H Kaibyshev , V U Davydov , A N Smirnov , V N Jmerik
DOI: 10.1088/1742-6596/643/1/012061
关键词:
摘要: InN optical resonators, which can support whispering-gallery modes of low orders up to room temperature, were made by MBE on patterned substrates. The observed effect mode switching with a temperature rise was ascribed the change parameters induced shift an absorption edge and modification its shape. results modelling taking into account variation refraction index reproduce typical distribution intensity electromagnetic field within resonators.
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