Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells
作者： R. Gargallo-Caballero , E. Luna , F. Ishikawa , A. Trampert
DOI: 10.1063/1.4705731
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摘要: The local element distribution across tensile-strained N δ-doped (In,Ga)As/GaAs quantum wells (QWs) is investigated by transmission electron microscopy. sub-monolayer (ML) insertion results in a several monolayers thick (In,Ga)(As,N) layer with lateral composition fluctuations. We also find an inhomogeneous In incorporation the QW, minimum content, [In]min, exactly at position of N-insertion, where content maximum, [N]max. Regardless along [N]max corresponds to [In]min so that this has lattice parameter close aGaAs. impact tensile strain on complex chemical configuration discussed.
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