作者: Andres Cuevas , Thomas Allen , James Bullock , Yimao Wan , Di Yan
DOI: 10.1109/PVSC.2015.7356379
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摘要: Effective surface treatments suppress possible recombination losses and confine photogenerated electrons holes within the bulk of silicon wafer, thus maximizing their number electrochemical potential that they can deliver to a load. For happen, it is necessary create regions with high conductivity for one carrier low other, which basis separation. There common thread joining passivation carrier-selective contacts, same principles apply both. One manipulation concentrations holes, be achieved by doping or depositing materials an appropriate bandgap, work function conductivity. The other method use hydrogen-rich semi-insulators bond chemically atoms. When used as part contact structure, need sufficiently thin permit current flow. Examples such passivated contacts are dopant diffusions coated insulators a-Si:H(i), doped polysilicon/SiOx structures, some transparent conductors.