Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
作者： Joe Margetis , Aboozar Mosleh , Sattar Al-Kabi , Seyed Amir Ghetmiri , Wei Du
DOI: 10.1016/J.JCRYSGRO.2017.01.041
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摘要: Abstract High quality, thick (up to 1.1 μm), strain relaxed GeSn alloys were grown on Ge-buffered Si (1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl 4 and low-cost commercial GeH precursors. The significance of surface chemistry regards growth rate Sn-incorporation is discussed by comparing kinetics data H 2 N carrier gas. role gas also explored the suppression Sn segregation evolution layer composition profiles via secondary ion mass spectrometry X-ray diffraction. Transmission electron microscopy revealed spontaneous compositional splitting formation a thin intermediate which dislocations are pinned. This enables thick, relaxed, defect-free epitaxial its top. Last, we present photoluminescence results indicate that both methods produce optoelectronic device quality material.
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