Concentration and Behavior of Carbon in Semiconductor Silicon

摘要: The concentration of carbon in semiconductor silicon and the behavior fusion crystallization have been studied by use charged particle activation analysis. solubility solid has found to be or slightly less at melting point, equilibrium distribution coefficient between liquid determined . Carbon content over above value seldom observed single crystals produced modern industrial techniques. appears depend more on growth conditions crystal than chemical purification method. phase diagram C‐Si system extremely low range is given, together with a discussion kinematics zone melting. Also, new technique for studying evaporation from melt shown.