ESD protection for high voltage applications
作者： Jian-Hsing Lee , Deng-Shun Chang
DOI:
关键词:
摘要: An electrostatic discharge (ESD) protection device includes a diode located in substrate and an N-type metal oxide semiconductor (NMOS) the adjacent diode, wherein both NMOS are coupled to input device, at least portion of collectively form ESD device.
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