Synchrotron X-ray topography of bismuth silicon oxide crystals
作者： J. Martínez-López , M. González-Mañas , M.A. Caballero , E. Diéguez , B. Capelle
DOI: 10.1016/0022-0248(96)00107-8
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摘要: Abstract The generation and distribution of growth defects in Czochralski-grown bismuth silicon oxide (Bi 12 SiO 20 ) crystals have been studied by synchrotron X-ray topography. relationship the paths grown-in dislocations with shape crystal-melt interface is also reported.
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