From Si Nanowires to Porous Silicon: The Role of Excitonic Effects
作者： Mauro Bruno , Maurizia Palummo , Andrea Marini , Rodolfo Del Sole , Stefano Ossicini
DOI: 10.1103/PHYSREVLETT.98.036807
关键词:
摘要: We show that the electronic and optical properties of silicon nanowires, with different size orientation, are dominated by important many-body effects. The excitonic gaps, calculated within first principles, agree available experimental data. Huge effects, which depend strongly on wire orientation size, characterize spectra. Modeling porous as a collection interacting we find an absorption spectrum is in very good agreement measurements only when electron-hole interaction included.
harvard.edu
sci-hub.se 参考文章(33)
Stefano Ossicini, Lorenzo Pavesi, Francesco Priolo, Light Emitting Silicon for Microphotonics ,(2003)
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561
O. Bisi, Stefano Ossicini, L. Pavesi, Porous silicon: a quantum sponge structure for silicon based optoelectronics Surface Science Reports. ,vol. 38, pp. 1- 126 ,(2000) , 10.1016/S0167-5729(99)00012-6
Alfredo M. Morales, Charles M. Lieber, A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires Science. ,vol. 279, pp. 208- 211 ,(1998) , 10.1126/SCIENCE.279.5348.208
Justin D Holmes, Keith P Johnston, R Christopher Doty, Brian A Korgel, Control of Thickness and Orientation of Solution-Grown Silicon Nanowires Science. ,vol. 287, pp. 1471- 1473 ,(2000) , 10.1126/SCIENCE.287.5457.1471
DDD Ma, CS Lee, FCK Au, SY Tong, ST Lee, Small-diameter silicon nanowire surfaces. Science. ,vol. 299, pp. 1874- 1877 ,(2003) , 10.1126/SCIENCE.1080313
Midori Kawamura, Neelima Paul, Vasily Cherepanov, Bert Voigtländer, Nanowires and Nanorings at the Atomic Level Physical Review Letters. ,vol. 91, pp. 096102- 096102 ,(2003) , 10.1103/PHYSREVLETT.91.096102
J. C. She, S. Z. Deng, N. S. Xu, R. H. Yao, J. Chen, Fabrication of vertically aligned Si nanowires and their application in a gated field emission device Applied Physics Letters. ,vol. 88, pp. 013112- ,(2006) , 10.1063/1.2162692
A. G. Cullis, L. T. Canham, P. D. J. Calcott, The structural and luminescence properties of porous silicon Journal of Applied Physics. ,vol. 82, pp. 909- 965 ,(1997) , 10.1063/1.366536
Y. M. Niquet, A. Lherbier, N. H. Quang, M. V. Fernández-Serra, X. Blase, C. Delerue, Electronic structure of semiconductor nanowires Physical Review B. ,vol. 73, pp. 165319- ,(2006) , 10.1103/PHYSREVB.73.165319