Cobalt(III) diazabutadiene precursors for metal deposition: nanoparticle and thin film growth.
作者： Thomas Pugh , Samuel D. Cosham , Jeff A. Hamilton , Andrew J. Kingsley , Andrew L. Johnson
DOI: 10.1021/IC402317G
关键词:
摘要: We report the synthesis and characterization of a family cobalt(III) metal precursors, based around cyclopentadienyl diazabutadiene ligands. The molecular structure complexes cyclopentadienyl-Cobalt(III)(N,N′-dicyclohexyl-diazabutadiene) (2c) cyclopentadienyl-Cobalt(III)(N,N′-dimesityl-diazabutadiene) (2d) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis highlighted isopropyl derivative CpCo(iPr2-dab) (2a) possible cobalt chemical vapor deposition (CVD) precursor. Atmospheric pressure CVD (AP-CVD) was employed using precursor 2a to synthesize thin films metallic on silicon substrates under an atmosphere hydrogen (H2). Analysis deposited at substrate temperatures 250 °C, 275 300 325 350 respectively, scanning electron microscopy (SEM) atomic force (AFM) reveal temperature dependent growth features: grown °C co...
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