Physical Properties of Thin Film Semiconducting Materials

摘要: The physics and chemistry of semiconducting materials is a continuous question debate. We can find large stock well‐known properties but at the same time, many things are not understood. In recent years, porous silicon (PS‐Si), diselenide copper indium (CuInSe2 or CIS) metal oxide semiconductors like tin (SnO2) zinc (ZnO) have been subjected to extensive studies because rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, biocompatible materials, Li‐based batteries, new generation MOSFETS. Bulk structure surface interface play important roles all these applications. A deeper understanding fundamental would impact largely on technological application performances. our laboratory, thin films undoped antimony‐doped deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS prepare...