Biexcitonic effect on the nonlinear optical properties of GaAs/AlxGa1−xAs quantum wire near the band edge

摘要: Abstract Using the time dependent perturbation technique for a three-level system, we have investigated theoretically role of biexcitons on quasi-steady state nonlinear optical processes like refraction and absorption in GaAs/Al x Ga 1− As semiconductor quantum wire (QWR). The spectrum is assumed to exhibit Wannier–Mott type discrete excitonic structure near band edge. We incorporated relaxation dephasing mechanisms both excitons phenomenologically. real imaginary parts third-order susceptibility responsible occurrence absorption, respectively, been derived from expression induced polarization QWR. Numerical estimates made QWR manifest distinctly influence absorption.