Hybrid Si-VO2 modulator with ultra-high extinction ratio based on slot TM mode.
作者： B. M. Younis , A. M. Heikal , M. Hussein , S. S. A. Obayya , Mohamed Farhat O. Hameed
DOI: 10.1364/OE.27.037454
关键词:
摘要: Nowadays, the development of modern optical systems relies on device size minimization and operating power reduction. Optical modulator based silicon insulator (SOI) platform is a key element in different systems. Therefore, with compact low insertion loss could improve system efficiency. In this work, novel hybrid plasmonic/silicon layers introduced. The full vectorial finite method (FV-FEM) used to numerically analyze proposed design. Vanadium dioxide (VO2) also utilized as cap layer control modulation process. (IL) extinction ratio (ER) suggested are equal 2.1 dB/µm 28 dB/µm, respectively, at wavelength 1.55 µm. Consequently, high figure-of-merit (FoM) =ER/IL = 13.5 achieved an bandwidth (ER > 3 dB) greater than 1 µm, which large comparison pervious designs.
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