Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

摘要: An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of transistor. Accordingly, thin film transistor having superior TFT properties can be realized, the including small hysteresis, normally OFF operation, high ON/OFF ratio, saturated current, and like. Furthermore, as method for manufacturing made an oxide, formation performed in atmosphere gas oxygen gas, so that carrier concentration controlled.