Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
作者： Yossi Yayon , Taisuke Ohta , Victor W. Brar , Jessica L. McChesney , Eli Rotenberg
DOI: 10.1063/1.2771084
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摘要: The authors present a scanning tunneling spectroscopy (STS) study of the local electronic structure single and bilayer graphene grown epitaxially on SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias are dominated by emergent spatially inhomogeneous large-scale similar to carbon-rich reconstruction SiC(0001). STS shows an ∼100meV gaplike feature around zero for both monolayer graphene/SiC, as well significant spatial inhomogeneity in above gap edge. Nanoscale at SiC/graphene interface is seen correlate with observed inhomogeneity. These results relevant potential devices involving transport or graphene/SiC.
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