Tuning of energy gap and 1D Dirac-like points in artificial graphene and boron nitride monolayer by an external electric field

摘要: Abstract A simple semianalytical model is proposed to predict the possibilities of effective manipulation electronic states in a graphene-like and two dimensional boron nitride-like quantum dot superlattices by means lateral electric field. Due Wannier-Stark localization an one energy dispersion perpendicular field direction observed. Interestingly, analogs Dirac points minibands’ touching are observed dispersion, for artificial graphene when weak enough. However, gap between minibands opened significant strength applied. On other hand, it demonstrated that appropriate choice can lead recovering nitride monolayer which not observable absence Importantly, analysis electron probability distributions brings out efficient mechanism switching localized different sublattices laterally applied The obtained results indicate on possibility control properties optical logical devices based honeycomb semiconductor superlattices.