Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect
作者： Yangjin Ma , Yi Zhang , Shuyu Yang , Ari Novack , Ran Ding
DOI: 10.1364/OE.21.029374
关键词:
摘要: We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion − 0.028 ± 0.009 dB for the device 0.017 0.005 device. Both show crosstalk lower than 37 dB. The devices were fabricated in a CMOS-compatible process using 248 optical lithography with single etch step.
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