Theoretical Study of Boron Clustering in Silicon
作者： Xiang-Yang Liu , Wolfgang Windl
DOI: 10.1007/S10825-005-5037-0
关键词:
摘要: Ion implantation is the method of choice to introduce dopants such as boron into silicon. Thermal anneals are used to heal the implant damage as well as to activate the dopant …
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C.S. Rafferty, P.A. Stolk, T. Diaz de la Rubia, S. Coffa, Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469 Materials Research Society, Warrendale, PA (US). ,(1997)
Weiwei Luo, Paul B. Rasband, Paulette Clancy, Bruce W. Roberts, Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped Si Journal of Applied Physics. ,vol. 84, pp. 2476- 2486 ,(1998) , 10.1063/1.368451
Won-Chang Lee, Sun-Ghil Lee, K J Chang, First-principles study of the self-interstitial diffusion mechanism in silicon Journal of Physics: Condensed Matter. ,vol. 10, pp. 995- 1002 ,(1998) , 10.1088/0953-8984/10/5/009
P. A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, D. C. Jacobson, J. M. Poate, H. S. Luftman, Trap‐limited interstitial diffusion and enhanced boron clustering in silicon Applied Physics Letters. ,vol. 66, pp. 568- 570 ,(1995) , 10.1063/1.114015
Ant Ural, P. B. Griffin, J. D. Plummer, Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects Physical Review Letters. ,vol. 83, pp. 3454- 3457 ,(1999) , 10.1103/PHYSREVLETT.83.3454
Lourdes Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, J. Barbolla, B cluster formation and dissolution in Si: A scenario based on atomistic modeling Applied Physics Letters. ,vol. 74, pp. 3657- 3659 ,(1999) , 10.1063/1.123213
M. Meléndez-Lira, J. D. Lorentzen, J. Menéndez, W. Windl, N. G. Cave, R. Liu, J. W. Christiansen, N. D. Theodore, J. J. Candelaria, Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study Physical Review B. ,vol. 56, pp. 3648- 3650 ,(1997) , 10.1103/PHYSREVB.56.3648
Bengt Magnusson, Cyrill Brosset, Madeleine Seleborg, K. Motzfeldt, Olof Theander, H. Flood, The Crystal Structure of B2.89Si. Acta Chemica Scandinavica. ,vol. 16, pp. 449- 455 ,(1962) , 10.3891/ACTA.CHEM.SCAND.16-0449
Hartmut Bracht, Eugene E Haller, None, Comment on "Self-diffusion in silicon: similarity between the properties of native point defects" Physical Review Letters. ,vol. 85, pp. 4835- 4835 ,(2000) , 10.1103/PHYSREVLETT.85.4835
M. Strobel, A. La Magna, S. Coffa, A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 186, pp. 339- 343 ,(2002) , 10.1016/S0168-583X(01)00916-8