作者: Jan Chochol , Kamil Postava , Michael Čada , Mathias Vanwolleghem , Martin Mičica
DOI: 10.1186/S41476-017-0044-X
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摘要: In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range each material including tuning by fine doping magnetic field. Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, n,p-doped undoped InSb) characterized using reflectivity measurement their optical properties described the Drude-Lorentz model, magneto-optical anisotropy. The parameters of presented. Moreover, strong modulation permittivity was demonstrated on InSb crystal in range. Description effect is presented obtained compared with a Hall measurement. Analyzing phonon/free carrier contribution shows possible use materials; surface plasmon THz resemble those noble metals visible near infrared tunable either or