Incomplete Solubility in Nitride Alloys

作者: I. H. Ho , G.B. Stringfellow

DOI: 10.1557/PROC-449-871

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摘要: A model based on the valence-force-field (VFF) has been developed specifically for calculation of irascibility gaps in III-V nitride alloys. In dilute limit, this allows relaxation atoms both sublattices. It was found that energy due to bond stretching and bending lowered solubility limit increased substantially when sublattices were allowed relax distances as large sixth nearest neighbor positions. Using model, equilibrium mole fraction N GaP calculated be 6×l0−7 at 700°C. This is slightly higher than results from semi-empirical delta lattice parameter (DLP) model. Both temperature dependence absolute values agree closely with experimental data. The more three orders magnitude larger result obtained using VFF group V atom positions given by virtual crystal approximation, i.e., only first bonds. Other systems, such GaAsN, AlPN, AlAsN, InPN, InAsN investigated well. fractions nitrogen InP InAs are highest, which agrees well recent data where high concentrations have produced Calculations also performed alloy systems mixing III sublattice so important device applications. Allowing 3rd gives an GaN 800°C less 6%. Again, agreement DLP calculation. may partially explain difficulties experienced growth these Indeed, evidence solid immiscibility recently reported. significant miscibility gap AlInN system, but AlGaN system completely miscible.

参考文章(30)
Masahiko Kondow, Kazuhisa Uomi, Kazuhiko Hosomi, Teruo Mozume, Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source Japanese Journal of Applied Physics. ,vol. 33, ,(1994) , 10.1143/JJAP.33.L1056
Matthias C Schabel, José Luís Martins, Structural model for pseudobinary semiconductor alloys. Physical Review B. ,vol. 43, pp. 11873- 11883 ,(1991) , 10.1103/PHYSREVB.43.11873
Markus Weyers, Michio Sato, Hiroaki Ando, Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Japanese Journal of Applied Physics. ,vol. 31, ,(1992) , 10.1143/JJAP.31.L853
W. G. Bi, C. W. Tu, N incorporation in InP and band gap bowing of InNxP1−x Journal of Applied Physics. ,vol. 80, pp. 1934- 1936 ,(1996) , 10.1063/1.362945
T. N. Morgan, H. Maier, Strain Fields and the Apparent Size of Donor Ions in GaP Physical Review Letters. ,vol. 27, pp. 1200- 1203 ,(1971) , 10.1103/PHYSREVLETT.27.1200
Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki, Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets Journal of Crystal Growth. ,vol. 145, pp. 209- 213 ,(1994) , 10.1016/0022-0248(94)91052-9
Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall, Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN Physical Review B. ,vol. 53, pp. 16310- 16326 ,(1996) , 10.1103/PHYSREVB.53.16310
J. Kapriński, J. Jun, I. Grzegory, M. Bugajski, Crystal growth of GaP doped with nitrogen under high nitrogen pressure Journal of Crystal Growth. ,vol. 72, pp. 711- 716 ,(1985) , 10.1016/0022-0248(85)90225-8