Unveiling the atomic defects and electronic structure of Cu2.2Zn0.8SnSe4-xTex (x = 0 to 0.04) by X-ray absorption fine structure spectroscopy.
作者： Weifeng Huang , Yingcai Zhu , Yong Liu , Lijuan Liu , Changchun Yang
DOI: 10.1039/D0CP01153C
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摘要: The quaternary chalcogenides consisting of earth-abundant elements such as Cu2ZnSnSe4 (CZTSe) have promising electrical and optical properties prompting enormous technological interest. Understanding different types defects including Cu/Zn ordering is believed to be the key point tackle challenges a large open circuit voltage deficit in CZTSe. Te doped Cu2.2Zn0.8SnSe4−xTex (x = 0.01–0.04) were investigated using X-ray absorption fine structure spectroscopy at Cu, Zn, Se K-edges well L3-edge. Cu zinc site with anti-site oxygen interstitials are identified. detailed electronic upon doping studied, providing insights into rich defect chemistry present this compound.
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