Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature
作者： Xiaoqing Li , Hongke Zhang , Xubing Lu , Zhiqiang Fang , Rihui Yao
DOI: 10.1016/J.SPMI.2019.106317
关键词:
摘要: Abstract In this paper, bottom-gate inverted-staggered Ga doped ZnO (GZO) thin film transistors were fabricated by pulsed laser deposition (PLD) at room temperature, and all of results demonstrated that the oxygen pressure has a huge effect on electrical properties device during preparation active layer. As increases from 0 Pa to 1.6 Pa, performances TFTs increase first then decrease. And GZO-TFTs exhibit best with μsat 12.32 cm2/V·s, an Ion/Ioff 9.17 × 106, Vth 4.93 V, SS 1.53 V/decade when is 1.0 Pa. The GZO films characterized XPS, XRD, AFM investigate phenomenon. XPS spectra O 1s 2p indicated moderate can improve quality due filled vacancies, but excess will bring out receptor complexes weaken performance TFTs. Furthermore, amorphous low roughness 0.78 nm. GZO-TFT great potential in large-area preparation.
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