Electromigration effects on compound growth at interfaces

摘要: Interfacial reactions are important in microelectronic devices and can be accelerated or decelerated by imposing a direct electric current normal to the interface. These effects analyzed including electromigration-driven interchange of atomic species conventional analysis reaction layer thickening binary system controlled interdiffusion an interfacial barrier. New types behavior predicted. When electromigration augments interdiffusion, growth accelerate as thickens, contrast usual deceleration. opposes there is limiting thickness, inversely proportional applied current.