Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes.
作者： Boya Lai , Zuxin Chen , Junming Zhang , Sheng Chu , Guang Chu
DOI: 10.1088/0957-4484/25/35/355201
关键词:
摘要: A green-light-emitting diode device was fabricated based on a p-type Sb-doped ZnO segments/Cd-alloyed ZnO/n-type film/heteronanowires array structure. The structures and chemical components of the heteronanowire sample were studied by energy dispersive spectrometer, x-ray photoelectron etc, from which statuses Cd Sb in confirmed. Spatially resolved photoluminescence measurement single revealed large bandgap shift Cd(x)Zn(1 - x)O active region. In electroluminescence characterizations, showed that green emission centered at 550 nm, suggesting successful formation functioning double heterojunction nanowire light-emitting diodes.
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