Behavior of p-n junction silicon radiation detectors in a temperature-compensated direct-current circuit

摘要: The behavior of siliconp–n junction radiation detectors used in the direct‐current short‐circuit mode without bias was examined under such load resistance which ensures operation a temperature‐compensated state. objective twofold; to check whether compensation is achieved and investigate extent shown at temperatures other than that initially selected as point. It found detector performance various thermal conditions can be predicted from knowledge individual circuit parameters it possible stabilize response within ±2% over relatively wide temperature range: 18°–40°C. However, case devices show currents large sensitivity, small dose rates needs considered separately.