作者: Marta De Luca , Silvia Rubini , Marco Felici , Alan Meaney , Peter C. M. Christianen
DOI: 10.1021/ACS.NANOLETT.7B02189
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摘要: At ambient conditions, GaAs forms in the zincblende (ZB) phase with notable exception of nanowires (NWs) where wurtzite (WZ) lattice is also found. The WZ formation both a complication to be dealt and potential feature exploited, for example, NW homostructures wherein ZB phases alternate controllably thus band gap engineering achieved. Despite intense studies, some fundamental electronic properties NWs are not fully assessed yet. In this work, by using photoluminescence (PL) under high magnetic fields (B = 0–28 T), we measure diamagnetic shift, ΔEd, Zeeman splitting free exciton formed core–shell InGaAs–GaAs NWs. quantitative analysis ΔEd at different temperatures (T 4.2 77 K) directions B allows determination reduced mass, μexc, planes perpendicular (μexc 0.052 m0, m0 electron mass vacuum) parallel 0.057 m0) ĉ ax...