Identification of the arsenic vacancy defect in electron-irradiated GaAs
作者： H. J. von Bardeleben , J. C. Bourgoin
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摘要: We report the systematic observation of a new electron-paramagnetic-resonance spectrum in wide series electron-irradiated GaAs crystals. The consists partially resolved multiplet 700-G linewidth and an effective g factor 2.00 for Bparallel(001) 2.04 Bparallel(110). Comparison its production behavior, photoexcitation spectrum, observability up to T = 70 K thermal annealing at 500 with previous results obtained by capacitance spectroscopy, lead us attribute it arsenic vacancy perturbed distribution interstitials (V/sub As/ -As/sub i/). experimental is well simulated this model spin-Hamiltonian parameters S 1, g/sub X/(V/sub As/-As/sub i/) 2.00, perpendicular/(V/sub 2.02 D 0.4 cm .
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