Effects on electrical and optical properties of InGaN/GaN MQWs light-emitting diodes using Ni/ITO transparent p-contacts on p-GaN
作者： Kuldip Singh , Ashok Chauhan , Manish Mathew , Rajesh Punia , Rajender Singh Kundu
DOI: 10.1007/S12596-019-00526-0
关键词:
摘要: In the present study, optical and electrical properties of e-beam-deposited Ni/indium–tin oxide (5/50 nm) contacts are studied compared with semi-transparent Ni/Au (5/5 contacts. The normalized transmittance 560 °C annealed Ni/ITO films was recorded 86% 73.1% at 463 nm, respectively. current–voltage characteristics both exhibit linear behavior. specific contact resistances for were 1.29 × 10−3 Ω cm2 1.76 10−1 cm2, forward voltages (VF) LEDs (Ni/Au p-contacts) 20 mA current injection found 2.8 V 3.11 V, It is clear that much better to p-contacts. On other hand, showed attributed more transparent nature ITO film in visible range. With a injection, electroluminescence (EL) intensity blue LED p-contact 14.9% higher than
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