Impurity-doped layer formation apparatus and electrostatic chuck protection method
作者： Masashi Kuriyama , Hiroki Murooka , Masaru Tanaka
DOI:
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摘要: An electrostatic chuck protection method includes providing an exposed surface with a protective for preventing adherence of foreign materials including substance exhibiting volatility in vacuum environment, and removing the order to perform process forming substrate electrostatically held on layer having chamber. The may be provided when low pumping mode operation is performed environment surrounding surface.
google.de 参考文章(46)
Jon J. Candelaria, Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method ,(1993)
Chia-ming Kuo, Chao-Yuan Huang, Method for cleaning out silicon-rich oxide in a pre-clean chamber ,(2001)
Duane Kish, Abdullah Alikhan, Jonathan Feroce, Santiago del Puerto, Erik Loopstra, Andrew Massar, Woodrow Olson, System and method for using a two part cover for protecting a reticle ,(2003)
Takashi Nogami, Masayoshi Hino, Kohei Tanaka, Wafer handling method and ion implanter ,(2010)
Nobuo Nagai, Mamoru Nogami, Ion implantation apparatus and method of controlling the same ,(1990)
Dragan Podlesnik, Jeffrey D. Chinn, Anisul Khan, Ajay Kumar, Apparatus for performing self cleaning method of forming deep trenches in silicon substrates ,(2000)
Oleg Byl, Robert Kaim, Joseph D. Sweeney, Carbon materials for carbon implantation ,(2010)
Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa, Deposition apparatus and electronic device manufacturing method ,(2010)
Andrew Massar, Duane P. Kish, Abdullah Alikhan, Jonathan H. Feroce, Woodrow J. Olson, Santiago del Puerto, Eric R. Loopstra, System for using a two part cover for protecting a reticle ,(2003)
Gary W. Groshong, Jason L. Monfort, Jose Luis Gonzalez, Robert B. Hixson, Physical vapor deposition apparatus with modified shutter disk and cover ring ,(2001)