Ideal hydrogen termination of the Si (111) surface
作者： G. S. Higashi , Y. J. Chabal , G. W. Trucks , Krishnan Raghavachari
DOI: 10.1063/1.102728
关键词:
摘要: Aqueous HF etching of silicon surfaces results in the removal surface oxide and leaves behind terminated by atomic hydrogen. The effect varying solution pH on structure is studied measuring SiH stretch vibrations with infrared absorption spectroscopy. Basic solutions ( pH=9–10) produce ideally Si(111) monohydride ( 3/4 SiH) oriented normal to surface. found be very homogeneous low defect density (<0.5%) narrow vibrational linewidth (0.95 cm−1 ).
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