The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
作者： X. Li , D. G. Zhao , D. S. Jiang , P. Chen , Z. S. Liu
关键词:
摘要: The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on leakage and device performance InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated connection with the depth QWs. It is found that effectiveness EBL depends much content In InGaN effective for low-In-content QW LDs to add moderate EBL, while it hardly helpful even harmful high-In-content increase content. addition, too unfavorable all due downward conduction band-bending last barrier (LQB) layer.
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G. M. Laws, E. C. Larkins, I. Harrison, C. Molloy, D. Somerford, Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys Journal of Applied Physics. ,vol. 89, pp. 1108- 1115 ,(2001) , 10.1063/1.1320007
Jean-Philippe Frimat, Sijia Xie, Alex Bastiaens, Bart Schurink, Floor Wolbers, Jaap den Toonder, Regina Luttge, Advances in 3D neuronal cell culture Journal of Vacuum Science & Technology B. ,vol. 33, pp. 1- 6 ,(2015) , 10.1116/1.4931636
Zengcheng Li, Jianping Liu, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang, Hui Yang, Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth Applied Physics Letters. ,vol. 103, pp. 152109- ,(2013) , 10.1063/1.4824850
Lingcong Le, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Jing Yang, Xiaojing Li, Xiaoguang He, Jianping Liu, Shuming Zhang, Hui Yang, Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 33, pp. 011209- ,(2015) , 10.1116/1.4905430
Sheng-Horng Yen, Yen-Kuang Kuo, Meng-Lun Tsai, Ta-Cheng Hsu, Investigation of violet InGaN laser diodes with normal and reversed polarizations Applied Physics Letters. ,vol. 91, pp. 201118- ,(2007) , 10.1063/1.2815652
Yi-An Chang, Jih-Yuan Chang, Yih-Ting Kuo, Yen-Kuang Kuo, Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer Applied Physics Letters. ,vol. 100, pp. 251102- ,(2012) , 10.1063/1.4729880
S. Khatsevich, D. H. Rich, S. Keller, S. P. DenBaars, Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled In x Ga 1 − x N ∕ Ga N multiple and single quantum wells Physical Review B. ,vol. 75, pp. 035324- ,(2007) , 10.1103/PHYSREVB.75.035324
M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars, Higher efficiency InGaN laser diodes with an improved quantum well capping configuration Applied Physics Letters. ,vol. 81, pp. 4275- 4277 ,(2002) , 10.1063/1.1524690
Sheng-Horng Yen, Bo-Jean Chen, Yen-Kuang Kuo, Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes international conference on numerical simulation of optoelectronic devices. ,vol. 38, pp. 1029- 1037 ,(2006) , 10.1007/S11082-006-9016-X
Chia-Yen Huang, You-Da Lin, Anurag Tyagi, Arpan Chakraborty, Hiroaki Ohta, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Optical waveguide simulations for the optimization of InGaN-based green laser diodes Journal of Applied Physics. ,vol. 107, pp. 023101- ,(2010) , 10.1063/1.3275325