Thermoelectric microsensor for pressure and gas concentration measurement
作者： Alain Giani , Asmail Al Bayaz , Abdel Boulouz , Frédérique Pascal-Delannoy , Alain Foucaran
DOI: 10.1016/S0921-5107(02)00265-9
关键词:
摘要: Abstract Narrow-band gap semiconductors n-Bi 2 Te 3 (n-type) and p-(Bi 1− X Sb )Te (p-type) have been elaborated by metal organic chemical vapour deposition. The thermoelectric electric properties of the best films grown under optimal conditions are presented. In same growth, a pressure sensor gas concentration based on x materials constructed using thin film technology. deposited energy converters that allow high sensitivity value 5 mV torr −1 mW for has found. These sensors an integrated thermocouple with power equal to 420 μV K . thermal exchange heating surface, at low power, surrounding is principal function these sensors.
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