Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV‐cleaved (110) InP
作者： John H. Slowik , H. W. Richter , L. J. Brillson
DOI: 10.1063/1.335820
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摘要: Temperature‐dependent current‐voltage (I‐V) and capacitance‐voltage (C‐V) measurements reveal that a low but nonzero barrier is present at the interface of Al deposited on ultrahigh‐vacuum‐cleaved n‐InP (110), true height lies between 0.21–0.26 eV. An analysis which allows for presence trapped charge near provides most accurate consistent determination effective barrier. The strongly reversibly temperature dependent, corresponding to movement Fermi level with temperature. interfacial resides in acceptorlike electron traps 0.10 eV below conduction‐band edge. are distributed 100–200 A into space‐charge region. These results discussed terms models defect electrical activity metal‐semiconductor interfaces, related annealing studies.
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