Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures
作者： A. Popescu , C. Cojanu , F. Sima , G. Socol , I. Mihailescu
DOI: 10.1109/SMICND.2006.283992
关键词:
摘要: MIS structures with AlN films deposited on p-Si substrates by pulsed laser deposition (PLD) were analyzed respect to their capacitance-voltage and conductance-voltage characteristics, measured at different frequencies temperatures of 77 300 K. The current-voltage characteristics independent temperature. It was shown that inter-trap tunneling could adequately account for the observed currents in these structures.
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