作者: Sathish Sugumaran , Chandar Shekar Bellan , Manivannan Nadimuthu
DOI: 10.1080/1023666X.2014.932322
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摘要: New hybrid PVA-InAlO thin films were successfully prepared by using the dip coating method. Functional group analysis confirms presence of metal-oxide vibration in films. Structural revealed that film was amorphous nature whereas annealed polycrystalline nature. Morphological images show are compact and have homogeneous grains various sizes ranging between 200 400 nm. The compositional In, Al, O. Dielectric constant values vary from 4.65 to 19.89 dielectric loss ≤0.977. Activation energy found be very low. results suggest new could used as high k layer transistor applications.