Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μm
作者： K. Alavi , T.P. Pearsall , S.R. Forrest , A.Y. Cho
DOI: 10.1049/EL:19830157
关键词:
摘要: Edge-emitting diodes made from Ga0.47In0.53As and Al0.48In0.52As, grown lattice-matched on InP substrates by molecular beam epitaxy with room-temperature emission at 1.60 μm, are reported. A multiquantum-well structure is used to shift the 54 meV 0.73 eV toward higher energy.
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