Surface texturing using reactive ion etching for multicrystalline silicon solar cells

作者: K. Fukui , Y. Inomata , K. Shirasawa

DOI: 10.1109/PVSC.1997.653921

关键词:

摘要: We have developed a new surface texturing technique using reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells, which is expected to form low reflectance on grains of various crystalline orientations. This texture has cone shape, and aspect ratio size can be easily controlled. optimized shape emitter sheet resistance. The optimum resistance RIE textured cell higher than that the usual cell. high makes low, but efficiency not so good. There an because with large saturation current performance decreased ratio. fabricated over 17% efficient area (225 cm/sup 2/) mc-Si this passivation schemes based nitride film deposited by plasma CVD hydrogen annealing at temperature.

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