Method to manufacture silicon quantum islands and single-electron devices
作者： Christoph Wasshuber , Gabriel George Barna , Olivier Alain Faynot
DOI:
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摘要: A method of manufacturing a single-electron transistor device is provided. The includes forming thinned region in silicon substrate, the offset by non-selected region. also at least one quantum island from subjecting to an annealing process. aligned with and tunnel junctions are formed between present invention device, integrated circuit that device.
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