Power semiconductor devices having improved high frequency switching and breakdown characteristics
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摘要: Integrated power semiconductor devices having improved high frequency switching performance, edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes lower-trench based source electrodes. The use of the electrode instead a larger reduces gate-to-drain capacitance (CGD) UMOSFET improves speed by reducing amount charging discharging current that is needed during operation.
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