Structure and dielectric properties of Bi-doped Ba 0.6 Sr 0.4 TiO 3 thin films fabricated by sol-gel method
作者： Kyoung-Tae Kim , Chang-Il Kim
DOI: 10.1016/S0167-9317(02)01008-0
关键词:
摘要: An alkoxide-based sol-gel method was used to fabricate Ba0.6Sr0.4TiO3 thin films doped by Bi from 5 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST were investigated as function dopant concentration. the strongly dependent contents. constant loss decreased with increasing content. However, leakage current density 10 film showed lowest value 5.13 × 10-7 at V. figure merit (FOM) reached maximum 32.42 films. constant, factor, tunability Bi-doped 333, 0.0095, 31.1%, respectively.
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