Non-conformal decoration of semiconductor nanowire surfaces with boron nitride (BN) molecules for stability enhancement: degradation-resistant Zn3P2, ZnO and Mg2Si nanowires

摘要: A simple and reliable strategy for stabilizing the surfaces of compound semiconductors was presented. The involved decorating semiconductor nanowires non-conformally with small molecules boron nitride (BN). More specifically, Zn3P2, ZnO Mg2Si nanowires, highly useful in energy conversion device fabrication (e.g., photovoltaics thermoelectrics), have been stabilized against air- acid-assisted degradation by their BN. It is believed that decoration nanowire BN made non-wettable to water aqueous acid solutions, thereby imparted them enhanced resistance water- degradation. This procedure did not alter bandgap nanowires. Moreover, this aided retaining electrical conduction between interfaces when are assembled into mats or pellets. solves one primary bottlenecks widespread use fabrication, namely stability. applicable other including nitrides, sulfides, silicides antimonides.