The Characteristics of Ga-doped ZnO Transparent Thin Films by using Multilayer
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DOI: 10.4313/JKEM.2007.20.12.1044
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摘要: With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer weak point that were damaged at high temperature. In this paper, we deposited transparent conductive film low And inserted Au thin between oxide compensate deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings on substrate by DC sputtering. optimization deposition conditions both AZO layers performed obtain better optical characteristics in advance. We presumed properties affected process GZO layers. best coating exhibited resistivity transmittance 77 %. From these results, can confirm possibility application as electrodes.
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