Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
作者： V.A. Shah , A. Dobbie , M. Myronov , D.R. Leadley
DOI: 10.1016/J.TSF.2011.10.102
关键词:
摘要: Reverse terrace graded buffers are proposed for high quality Ge content Si0.23Ge0.77 buffers. The buffer structure allows the effects of applied thermal budget and grading rate to be separated compared previously reported reverse linearly virtual substrates. A reduction in threading dislocation density 2.1 × 106 cm− 2 an enhanced relaxation is found these structures almost identical thickness twice strain gradient linear structures, whilst a smooth surface retained with rms roughness just 1.9 nm.
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