AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface
作者： Kwangeun Kim , Tong June Kim , Huilong Zhang , Dong Liu , Yei Hwan Jung
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摘要: The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-electron mobility transistor (HEMT). In this study, the effects ultraviolet/ozone (UV/O3) treatment applied to Al0.3 Ga0.7 N/GaN on electrical performance Schottky-gate HEMT were investigated. reverse-bias leakage current Schottky diode was reduced by three orders after treatment. X-ray photoelectron spectroscopy confirms formation Ga2O x layer which serves as an interface passivation and thus suppresses trap-assisted electron tunneling. Capacitance–voltage measurements show shifts threshold on-set voltages, indicating decreased states result characteristics exhibit improved transconductance subthreshold swing values
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