Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities. Comparison with Experiments

摘要: The redistribution of boron in silicon through high temperature proton irradiation is described. It interpreted with a two-species model, where the impurity can exist either as slow or fast diffuser, transformation between these two species being induced interaction radiation defects. could be substitutional and interstitial boron. influence experimental parameters, especially concentration, beam current, studied by taking into account formation impurity—defect complexes direct vacancy—interstitial recombination. following thermodynamical parameters are proposed for boron: Em = 1.2 eV, Sm 0.14 k, D0 4 × 10−3 cm2/s. self interstitial—vacancy boron—interstitial capture radius would then 1.4a 4a respectively. Le phenomene de du bore dans le silicium par haute des protons est decrit. Il interprete un modele lequel l'impurete peut se presenter sous deux formes, avec coefficients diffusion differents, et qui transforment l'une en l'autre les defauts d'irradiation. Ces formes pourraient e'tre substitutionnel interstitiel. L'influence parametres experimentaux, particulier concentration d'impuretes, flux d'irradiation, etudiee, interpretee, prenant compte la impuretes—defauts, recombinaison directe lacune—impurete. On propose, pour interstitiel, thermodynamiques suivants: 1,2 0,14 cm2/s, rayons lacune—auto interstitie let lacune—bore interstitiel respectivement 1,4a 4a.