Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems
作者： N.A. Tulina , I.Yu. Borisenko , V.V. Sirotkin
DOI: 10.1016/J.PHYSLETA.2008.09.015
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摘要: Abstract The transitional processes in heterocontacts based on strongly correlated electron systems (SCES) are studied for analyzing of the effect resistive switching (ERS). It has been shown that process is asymmetric with respect to into “on” and “off” states, time controlled by a voltage level, this can be less than microseconds, other hand, relaxation reach tens seconds. two processes: change resistance state normal metal/SCES interface under electric current field electrodiffusion oxygen vacancies, at doping level contact area properties heterocontact change. In particular, mobile induced makes it possible use device ERS as memristor. On possibility control ON OFF parameters show possibilities these devices memory elements “RAM”.
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