Field effect transistor having contact layer of transistor gate electrode material

摘要: Improved field effect transistor (FET) structures are described. They include a thin film (TFT), wherein contact layer directly connects diffusion region of the TFT to an active site another device, e.g., transistor. This invention is especially suitable for TFT's which built on one or more conductive studs. Static random access memory (SRAM) cells incorporating also Moreover, this directed methods preventing alleviating problems associated with gouging during formation layers.